ECH8668 no. a1510-1/8 features ? the ECH8668 incorporates an n-channel mosfet and a p-channel mosfet that feature low on-resistance and high-speed switching , thereby enablimg high-density mounting ? 1.8v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 20 --20 v gate-to-source voltage v gss 10 10 v drain current (dc) i d 7.5 --5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 40 --40 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-001 80112 tkim/o2809pe tkim tc-00002167 sanyo semiconductors data sheet ECH8668 http:// semicon.sanyo.com/en/network product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection ordering number : ena1510a 87 6 5 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view tl ECH8668-tl-h tp lot no. n-channel and p-channel silicon mosfets general-purpose switching device applications
ECH8668 no. a1510-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance | yfs | v ds =10v, i d =4a 4.2 7 s static drain-to-source on-state resistance r ds (on)1 i d =4a, v gs =4.5v 13 17 m r ds (on)2 i d =2a, v gs =2.5v 18 26 m r ds (on)3 i d =0.5a, v gs =1.8v 30 48 m input capacitance ciss v ds =10v, f=1mhz 1060 pf output capacitance coss 180 pf reverse transfer capacitance crss 135 pf turn-on delay time t d (on) see speci ed test circuit. 17.5 ns rise time t r 120 ns turn-off delay time t d (off) 68 ns fall time t f 80 ns total gate charge qg v ds =10v, v gs =4.5v, i d =7.5a 10.8 nc gate-to-source charge qgs 2.1 nc gate-to-drain ?miller? charge qgd 2.9 nc diode forward voltage v sd i s =7.5a, v gs =0v 0.74 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.3 v forward transfer admittance | yfs | v ds =--10v, i d =--3a 4.9 8.3 s static drain-to-source on-state resistance r ds (on)1 i d =--3a, v gs =--4.5v 29 38 m r ds (on)2 i d =--1.5a, v gs =--2.5v 41 58 m r ds (on)3 i d =--0.5a, v gs =--1.8v 64 98 m input capacitance ciss v ds =--10v, f=1mhz 960 pf output capacitance coss 180 pf reverse transfer capacitance crss 140 pf turn-on delay time t d (on) see speci ed test circuit. 14 ns rise time t r 55 ns turn-off delay time t d (off) 92 ns fall time t f 68 ns total gate charge qg v ds =--10v, v gs =--4.5v, i d =--5a 11 nc gate-to-source charge qgs 2.0 nc gate-to-drain ?miller? charge qgd 2.8 nc diode forward voltage v sd i s =--5a, v gs =0v --0.82 --1.2 v switching time test circuit [n-channel] [p-channel] ordering information device package shipping memo ECH8668-tl-h ech8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =4a r l =2.5 v dd =10v v out v in 4v 0v v in ECH8668 pw=10 s d.c. 1% p. g 50 g s d i d = --3a r l =3.33 v dd = --10v v out v in 0v --4v v in ECH8668
ECH8668 no. a1510-3/8 [nch] [nch] drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a 0 1.5 3.5 5.5 2.0 4.0 6.0 6.5 7.0 0.5 2.5 4.5 1.0 3.0 5.0 7.5 0 0 it12483 it12484 0.1 0.2 0.3 0.4 0.5 0 0.5 1.0 1.5 2.0 2.5 1 4 7 2 5 8 3 6 9 10 v ds =10v --25 c ta=75 c v gs =1.5v 2.0v 2.5v 25 c 4.0v 6.0v 8.0v 3.0v | y fs | -- i d forward transfer admittance, | y fs | -- s [nch] [nch] [nch] [nch] [nch] [nch] --60 --40 --20 0 20 40 60 80 100 120 140 160 0 10 20 30 40 5 15 25 35 v gs =2.5v, i d =2a v gs =4.5v, i d =4a v gs =4.0v, i d =4a v gs =3.1v, i d =4a gate-to-source voltage, v gs -- v r ds (on) -- v gs ambient temperature, ta -- c r ds (on) -- ta sw time -- i d switching time, sw time -- ns ciss, coss, crss -- v ds drain current, i d -- a drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain-to-source voltage, v ds -- v ciss, coss, crss -- pf static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m 5 2 2 100 7 5 3 3 1000 7 0 it12485 0 0.1 0.2 0.3 0.4 0.5 0.6 1.0 0.9 0.8 0.7 26 4810 0 5 10 15 20 30 25 35 40 ta=25 c it12486 it12487 it12488 0481216 2 6 10 14 18 20 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 it12490 0.1 2 2 1.0 7 5 3 10 7 5 3 0.1 2 0.01 57 23 1.0 2 57 3 ta= --25 c 75 c 25 c v ds =10v - -25 c 25 c ta=75 c v gs =0v ciss coss crss f=1mhz 10 57 3 10 7 5 3 i d =2a 4a 100 7 5 3 2 10 1000 7 5 3 2 0.1 2 1.0 357 it12489 v dd =10v v gs =4v t d (off) t r t f 10 23 57 t d (on)
ECH8668 no. a1510-4/8 [nch] [nch] a s o drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 0 1 2 3 4 5 6 7 8 9 10 11 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it12491 it14781 v ds =10v i d =7.5a 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.01 0.1 57 23 2 1.0 57 32 10 57 3235 operation in this area is limited by r ds (on). 100 s 100ms dc operation (ta=25 c) 10ms 1ms 2 3 5 3 7 5 7 10 i dp =40a i d =7.5a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) pw 10 s | y fs | -- i d forward transfer admittance, | y fs | -- s [pch] [pch] [pch] [pch] [pch] [pch] gate-to-source voltage, v gs -- v r ds (on) -- v gs ambient temperature, ta -- c r ds (on) -- ta drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a i s -- v sd static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a 0 it13074 0 --0.5 --1.0 --1.5 --2.0 --2.5 0 --0.4 --0.2 --0.6 --0.8 --1.0 --1.2 -- 1 -- 4 -- 7 -- 2 -- 5 -- 3 -- 6 -- 8 - -25 c ta=75 c 25 c it13076 --60 --40 --20 0 20 40 80 120 60 100 140 160 0 20 40 60 80 100 it13077 it13078 --0.01 7 5 3 2 --0.1 2 0.1 2 2 1.0 7 5 3 2 3 10 7 5 3 2 --0.01 --0.1 2 57 3 --1.0 2 57 3 --10 57 3 ta= --25 c 75 c 25 c v ds = --10v --25 c 25 c ta=75 c v gs =0v v gs = --1.8v, i d = --0.5a v gs = --2.5v, i d = --1.5a v gs = --4.5v, i d = --3.0a --1.0 7 5 3 2 --10 7 5 3 0 it13075 0 -- 2 -- 4 -- 1 -- 3 -- 5 0 it13073 --0.2 --0.1 --0.4 --0.6 --0.8 --0.3 --0.5 --0.7 --0.9 --1.0 -- 2 -- 6 -- 7 -- 4 -- 1 -- 5 -- 3 -- 8 0 20 40 60 100 80 120 140 v gs = --1.2v --1.8v ta=25 c --2.0v --8.0v --2.5v --4.5v i d = --0.5a --3.0a --1.5a --1.5v v gs = --10v
ECH8668 no. a1510-5/8 [pch] [pch] drain current, i d -- a sw time -- i d switching time, sw time -- ns ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf 100 2 2 5 3 3 1000 7 7 7 2 10 2 100 7 5 3 1000 7 5 3 --0.1 --0.01 23 57 2 --1.0 357 2 it13079 0 --4 --14 --8 --18 --2 --12 --6 --16 --10 --20 it13080 v dd = --10v v gs = --4v t d (off) t d (on) t r t f ciss coss crss f=1mhz --10 23 57 it13083 p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit total dissipation when mounted on ceramic substrate (900mm 2 0.8mm) ambient temperature, ta -- c [pch] [nch/pch] [pch] a s o drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 012345678 10 911 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 it13081 it13082 v ds = --10v i d = --5a 2 2 3 5 7 --0.1 2 3 5 7 --1.0 -- 0.01 -- 0.01 -- 0.1 57 23 23 5 2 -- 1.0 57 32 operation in this area is limited by r ds (on). 100ms dc operation (ta=25 c) 10ms 1ms i dp = --40a i d = --5a 2 3 5 7 --10 3 5 7 --100 -- 10 57 3 100 s ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) pw 10 s
ECH8668 no. a1510-6/8 embossed taping speci cation ECH8668-tl-h
ECH8668 no. a1510-7/8 outline drawing land pattern example ECH8668-tl-h mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65
ECH8668 ps no. a1510-8/8 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. note on usage : since the ECH8668 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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